| PART |
Description |
Maker |
| BFC52 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC10 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC47 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SML5020BN |
4TH GENERATION MOSFET
|
SEME-LAB[Seme LAB]
|
| DPX-S435-15 |
4th Generation Intel? Core?Gaming platform
|
Advantech Co., Ltd.
|
| GT60N321 EA09964 |
High Power Switching Applications The 4th Generation
From old datasheet system
|
Toshiba
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| USB2227-AHZS-XX USB2227-NU-05 USB222706 USB2228-AH |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC[SMSC Corporation]
|
| USB2602-NU-XX USB2601 USB2601_06 USB2601-NE-XX USB |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs and HS Hub
|
SMSC[SMSC Corporation]
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
